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Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：10.7A (Ta), 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4468 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT10H010SPS-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features an on-resistance of 8.8mΩ at VGS=10V and 11.5mΩ at VGS=6V, supporting continuous drain currents up to 100A at TC=25°C. The device includes a body diode with a forward voltage of 1.3V max and offers fast switching characteristics with turn-on delay of 18.6ns and fall time of 29.5ns. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- 100% unclamped inductive switching capability for robust end applications
- Low on-resistance minimizes conduction losses
- Fast switching speed reduces dynamic power loss
Applications
- Motor controls
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets RoHS compliance standards and halogen-free requirements if mandated by project specifications. Ensure the selected variant aligns with the intended thermal and electrical operating conditions.
Selection Notes
Select this component when high current handling and low conduction losses are critical. The PowerDI5060-8 package provides efficient thermal dissipation through the exposed drain pad. Consider the gate threshold voltage and total gate charge for driver compatibility in high-frequency switching applications.
Part Context
This part belongs to Diodes Incorporated's generation of N-channel MOSFETs designed for notebook battery power management and load switches. It utilizes silicon technology and is housed in a molded plastic PowerDI package with matte tin annealed terminal finish over a copper lead-frame.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix as indicated in the manufacturer documentation.
FAQ
What is the maximum avalanche energy rating?
The maximum avalanche energy (EAS) is 93.7 mJ with an inductance of 0.3mH, and 307 mJ with an inductance of 3mH.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises from -55°C to +150°C, as shown in the typical on-resistance vs. junction temperature graphs.
