DMT10H015LCG-7

$1.07

Description：MOSFET N-CH 100V 9.4A/34A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:95e87953046a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 9.4A/34A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8
Package / Case：8-PowerVDFN

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DMT10H015LCG-7

Overview

The DMT10H015LCG-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) surface-mount package with an 8-pin configuration. Key electrical parameters include a maximum drain-source voltage of 100V, a continuous drain current of 34A at TC=+25°C, and a static drain-source on-resistance of 15mΩ at VGS=10V and ID=20A. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state losses while maintaining superior switching performance through low input capacitance and fast switching speed.
Manufactured using a green molding compound that is totally lead-free, fully RoHS compliant, and free from halogen and antimony.
Features NiPdAu terminal finish over a copper leadframe, ensuring solderability per MIL-STD-208 standards.

Applications

Notebook battery power management
Load switch circuits
Backlighting systems
DC-DC converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a standard tape and reel packaging quantity of 2,000 units. Confirm that the required component matches the exact part number and package type specified in the design documentation to ensure compatibility with the intended application requirements.

Selection Notes

Select this component for applications requiring high conversion efficiency and low on-resistance in compact designs. The V-DFN3333-8 package provides a small footprint suitable for space-constrained electronics. Ensure thermal management aligns with the specified thermal resistance values for the chosen mounting conditions.

Part Context

This component belongs to the DMT10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on optimizing the balance between low on-resistance and switching performance for modern power management applications.

Replacement Considerations

The DMT10H015LCG-13 serves as a direct substitute with identical electrical characteristics but utilizes a 3,000-unit tape and reel packaging format instead of the 2,000-unit format.

FAQ

Is the DMT10H015LCG-7 suitable for use in life support devices?

No, Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval.