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Product Detailed Parameters
- Description：MOSFET N-CH 100V 7.3A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：7.3A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta), 46W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT10H015LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8 surface-mount package with a maximum drain-source voltage (VDS) of 100 V and a gate-source voltage (VGS) rating of ±20 V. The device supports a continuous drain current (ID) of 44 A at TC = +25°C and 10 A at TA = +25°C, with a pulsed drain current (IDM) of 150 A. The static drain-source on-resistance (RDS(ON)) is specified as 16 mΩ max at VGS = 10V/ID = 20A, and 18 mΩ max at VGS = 6V/ID = 20A. Total gate charge (QG) is typically 33.3 nC. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package design for cooler running applications
- Low RDS(ON) characteristics to minimize on-state power losses
- Fast switching speed supported by low input capacitance
- Lead-free finish compliant with RoHS standards
Applications
- Motor Control
- DC-DC Converters
- Power Management
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required JEDEC high reliability standards if applicable to the target environment. Ensure the procurement channel is authorized to avoid counterfeit risks associated with unauthorized sales channels.
Selection Notes
Select this component when a compact SMD solution is required for 100V switching applications. The PowerDI5060-8 profile is suitable for thin designs. Evaluate thermal management requirements based on the 52 °C/W junction-to-ambient resistance for ambient temperature operation or utilize board copper planes for case temperature scenarios.
Part Context
This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI® trademarked package technology designed to provide superior thermal performance in a small footprint compared to traditional packages.
Replacement Considerations
For automotive applications requiring specific change control or IATF 16949 manufacturing, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters before substituting with other 100V N-channel MOSFETs.
