DMT10H015SPS-13

$0.32

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:eaf34c610b39 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：7.3A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta), 46W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT10H015SPS-13

Overview

The DMT10H015SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8 package and operates with a drain-source voltage of 100V. The device provides a continuous drain current of 53A at TC = +25°C, with a maximum on-resistance of 14.5mΩ at VGS = 10V and 19.5mΩ at VGS = 6V. Total power dissipation reaches 78W at TC = +25°C. It supports an operating temperature range from -55°C to +150°C.

Feature Summary

Features 100% unclamped inductive switching (UIS) testing in production for enhanced reliability.
Utilizes a thermally efficient PowerDI5060-8 package designed for cooler running applications.
Designed to minimize on-state losses while maintaining superior switching performance.
Qualified to JEDEC standards for high reliability and meets RoHS compliance requirements.

Applications

Motor controls
DC-DC converters
Notebook battery power management
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the PowerDI5060-8/SWP variant matches your board layout requirements. Ensure design parameters align with the specified thermal resistance values under your actual mounting conditions rather than standard test boards.

Selection Notes

Select this component when a 100V rating and low RDS(ON) are required in a compact surface-mount footprint. Consider the 53A continuous current capability and 78W power dissipation at case temperature for thermal management planning. Evaluate gate charge and switching speeds against driver capabilities for optimal efficiency in high-frequency applications.

Part Context

This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in the PowerDI5060-8 package, which offers improved thermal performance compared to smaller packages. The series is engineered for general-purpose switching applications requiring robust avalanche energy handling and low conduction losses.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Verify pinout compatibility and electrical specifications match exactly before substitution.

FAQ

Is the DMT10H015SPS qualified for automotive applications?

No, this specific part number is not AEC-Q100/101 qualified. For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix.