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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 6.9A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
- Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：683pF @ 50V
- Power - Max：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMT10H032LDVWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 32 mΩ at 10 V gate drive. It is housed in a PowerDI3333-8/SWP package with wettable flanks, supporting surface mount installation. The component operates within a junction temperature range of -55°C to 175°C and meets automotive qualification standards.
Feature Summary
- Automotive-grade reliability compliant with AEC-Q101 standards
- Surface-mount design incorporating wettable flank technology for enhanced solder joint inspection
- Low on-resistance characteristics optimized for efficient power switching applications
Applications
- Automotive power distribution systems
- High-side and low-side load switch circuits
- DC-DC converter output stages
Procurement Notes
Verify the specific suffix designation against the manufacturer's latest documentation to confirm packaging quantity and tape-and-reel specifications. Ensure that the procurement channel provides traceability to the original equipment manufacturer. Confirm compliance with RoHS3 directives and REACH regulations prior to integration into supply chains requiring strict environmental adherence.
Selection Notes
Select this component when designing circuits requiring a 100 V rating with moderate current handling capabilities in a compact footprint. The wettable flank package facilitates automated optical inspection, making it suitable for high-reliability automotive assemblies. Evaluate thermal management requirements based on the specified power dissipation limits under ambient conditions.
Part Context
This part belongs to the DMT10H series of automotive MOSFETs from Diodes Incorporated. The series focuses on providing robust performance in space-constrained automotive environments. The specific model utilizes advanced trench technology to achieve low conduction losses while maintaining high breakdown voltage capabilities typical of the 100 V class.
Replacement Considerations
Direct substitutes include DMTH10H032LFVW-7 and DMTH10H032LFVWQ-13. Verify pinout compatibility and thermal resistance parameters before substitution.
