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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 6A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：544pF @ 50V
- Power - Max：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMT10H032SDVW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 20 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 62 mΩ at 10 V gate drive. It utilizes the PowerDI3333-8 surface-mount package with wettable flanks for improved solder joint inspection. The component operates within a junction temperature range of -55°C to +150°C and complies with RoHS3 standards.
Feature Summary
- N-channel enhancement mode construction for high-speed switching applications
- PowerDI3333-8 package design with wettable side walls for enhanced reliability
- Low on-resistance characteristics optimized for power efficiency
- Compliance with RoHS3 directives for environmental safety
Applications
- DC-DC converter circuits
- Synchronous rectification modules
- Power management integrated circuits
- Battery protection systems
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm tape-and-reel packaging quantities and lead times. Ensure the part number matches the exact electrical specifications required for the target application, as minor variations in suffixes may indicate different testing or quality grades. Cross-reference with authorized distributors to confirm current availability status and authenticity before procurement.
Selection Notes
Select this component when a compact surface-mount solution is required for 100 V applications. The PowerDI3333-8 package offers a small footprint suitable for space-constrained designs. Evaluate thermal performance based on the specified power dissipation limits and ensure adequate PCB copper area for heat sinking. Confirm that the gate charge parameters align with the driving circuit capabilities for optimal switching speed.
Part Context
This part belongs to the DMT10 series of N-channel MOSFETs from Diodes Incorporated, designed for general-purpose power switching. The series includes various packages and resistance values to suit different current and thermal requirements. The DMT10H032SDVW-13 specifically targets applications needing a balance between low on-resistance and minimal board space utilization in modern electronic devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with alternative components by comparing key parameters such as Vdss, Id, Rds(on), Qg, and package dimensions. Ensure any replacement meets the same thermal and electrical performance standards required by the original design.
