DMT10H032SFVW-7

$0.70

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:87c222d9bf37 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：544 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT10H032SFVW-7

Overview

The DMT10H032SFVW-7 is a 100V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) UX package. It features a maximum drain-source voltage of 100V and a gate-source voltage rating of ±20V. The device supports a continuous drain current of 35A at TC = +25°C and 28A at TC = +70°C. Its static drain-source on-resistance is 32mΩ max at VGS = 10V and ID = 7A. Total gate charge is 8.0nC max at VGS = 10V. Operating temperature range spans -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features wettable flanks to facilitate improved optical inspection during manufacturing processes.
Complies with RoHS 3 standards and is halogen and antimony free.
Includes 100% unclamped inductive switching (UIS) testing in production to ensure robustness.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel quantity of 2,000 units, whereas '-13' denotes 3,000 units per reel. Confirm that the required packaging matches the intended assembly line specifications before placing orders. Ensure compliance with moisture sensitivity level 1 requirements for storage and handling.

Selection Notes

Select this component for designs requiring a compact form factor with thermally efficient capabilities. The small PowerDI3333-8 package enables higher density end products compared to larger alternatives. Consider the thermal resistance values when designing heat dissipation strategies for the target application environment.

Part Context

This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series utilizes silicon technology and is available in various packages including PowerDI3333-8 and U-DFN2020-6. These devices are engineered to balance low on-resistance with fast switching speeds for modern electronic systems.