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Product Detailed Parameters
- Description：MOSFET N-CH 100V 4A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：266 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT10H072LFDF-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 62mΩ at VGS=10V and 80mΩ at VGS=6V, with continuous drain currents of 4A and 3.5A respectively. The device utilizes a U-DFN2020-6 package with a 0.6mm profile. Key electrical parameters include a gate threshold voltage of 1V to 3V, total gate charge of 4.5nC at VGS=10V, and a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power-management applications through minimized on-state resistance and superior switching performance.
- Features a 0.6mm low-profile package with a compact PCB footprint of 4mm².
- Includes 100% unclamped inductive switching (UIS) testing in production to ensure robust end-application reliability.
Applications
- Power-management functions
- Battery-operated systems and solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel carrier configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS 2/3 compliance standards and is halogen-free. Ensure the procurement channel is authorized to guarantee product authenticity and adherence to standard terms of sale.
Selection Notes
Select this component when a 100V rating and low RDS(ON) are required within a constrained vertical space. The U-DFN2020-6 package is suitable for applications prioritizing minimal board area usage. Evaluate thermal dissipation requirements against the specified junction-to-ambient resistance values for the intended operating environment.
Part Context
This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the same core electrical specifications as the automotive-compliant variant DMT10H072LFDFQ but lacks the specific automotive qualification designation. The device represents a newer generation design focused on balancing low conduction losses with fast switching capabilities.
Replacement Considerations
The automotive-grade equivalent DMT10H072LFDFQ offers identical electrical characteristics but includes additional automotive qualification. Verify if the application requires AEC-Q101 certification before substituting or selecting the Q-suffix variant over the standard commercial version.
