DMT10H072LFDF-7

$0.93

Description：MOSFET N-CH 100V 4A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:188fa2e0f07f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 4A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：266 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT10H072LFDF-7

Overview

The DMT10H072LFDF-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 62mΩ at VGS=10V and 80mΩ at VGS=6V, supporting continuous drain currents of 4A at +25°C and 3.2A at +70°C. The device utilizes a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². Electrical characteristics include a gate threshold voltage of up to 3V and a total gate charge of 4.5nC at VGS=10V.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Manufactured with a 0.6mm low-profile package suitable for space-constrained applications.
Subjected to 100% unclamped inductive switching (UIS) testing during production to ensure robustness.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Power-management functions
Battery-operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration as defined in the manufacturer's documentation. Confirm that the required component meets all applicable environmental directives, including RoHS 3 compliance and halogen-free standards, prior to finalizing procurement specifications.

Selection Notes

Select this component when a 100V rating and low on-resistance are required for compact designs. The U-DFN2020-6 package provides a small footprint ideal for dense layouts. Ensure thermal management aligns with the specified junction-to-ambient resistance values under the intended operating conditions.

Part Context

This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on optimizing the balance between conduction losses and switching speeds. The DMT10H072LFDF variant specifically targets applications requiring a 100V breakdown voltage within a miniature surface-mount form factor.

Replacement Considerations

An automotive-compliant version of this component is available under the separate datasheet designation DMT10H072LFDFQ. Verify if automotive qualification requirements necessitate this specific alternative over the standard commercial grade part.