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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V PowerDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMT10H4M9LPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (VDS) of 100 V and a continuous drain current (ID) of 25 A. The device exhibits a maximum on-resistance (RDS(on)) of 4.9 mΩ at a gate-source voltage of 10 V. It is housed in a PowerDI® 5060-8 surface-mount package, designed for high-current applications requiring low conduction losses.
Feature Summary
- Low on-resistance for efficient power handling
- High-voltage capability for robust operation
- Compact surface-mount packaging
Applications
- DC-DC converter modules
- Motor control circuits
- Power distribution systems
Procurement Notes
Verify the specific datasheet revision and electrical test conditions provided by Diodes Incorporated before finalizing design integration. Confirm that the PowerDI 5060-8 footprint matches your PCB layout requirements. Ensure thermal management strategies account for the specified power dissipation limits under actual operating loads to maintain reliability.
Selection Notes
Select this component when a 100 V rating and approximately 4.9 mΩ on-resistance are required in a compact SMD form factor. Compare total gate charge and switching times against system efficiency targets. Evaluate thermal performance relative to ambient temperature constraints and available board space for heat dissipation.
Part Context
This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated, utilizing the PowerDI 5060-8 package. This series targets high-efficiency power management solutions where size and thermal performance are critical. The numbering convention typically indicates voltage class and resistance characteristics within the family.
Replacement Considerations
Consult official cross-reference lists or manufacturer substitution guides for verified equivalents. Ensure any substitute maintains identical pinout, voltage ratings, and thermal characteristics.
