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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V TO252 T&R
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMT10H9M9LK3-13 is a single N-channel MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a breakdown voltage (BVDSS) ranging from 61V to 100V and utilizes a TO-252 package with tape-and-reel packaging. This component is characterized by low on-resistance and fast switching capabilities, which are critical for minimizing conduction losses and improving dynamic performance in modern electronic circuits.
Feature Summary
- Low on-resistance for enhanced efficiency
- Fast switching characteristics
- Suitable for high-efficiency power management
Applications
- High-efficiency power management applications
Procurement Notes
Verify the specific BVDSS value within the 61V–100V range against your circuit requirements, as datasheets may list this as a range. Confirm the TO-252 package type and Tape & Reel (TR) packaging format match your assembly line specifications. Ensure compatibility with the manufacturer's latest product change notices regarding electrical specifications.
Selection Notes
Select this component when low on-resistance and fast switching are prioritized for power management efficiency. The TO-252 package offers a balance of thermal performance and mounting convenience. Verify that the 61V–100V breakdown voltage range aligns with the system's maximum drain-source voltage constraints.
Part Context
This part belongs to the DMT10 series of N-channel MOSFETs manufactured by Diodes Incorporated. The series is engineered for applications requiring improved efficiency through reduced conduction and switching losses. The DMT10H9M9LK3-13 specifically denotes the TO-252 package variant with tape-and-reel delivery.
Replacement Considerations
Check for direct substitutes within the DMT10 series or other Diodes Incorporated MOSFETs with matching TO-252 packages and similar Rds(on) values. Ensure any replacement maintains the required BVDSS range and switching speed characteristics.
