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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V SO-8 T&R
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The DMT10H9M9SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage (BVDSS) range of 61V to 100V and utilizes an SO-8 surface-mount package. The device is supplied in tape and reel format for automated assembly processes. As part of the DMT10 series, it is designed for general-purpose switching applications requiring reliable performance within standard operating temperature ranges.
Feature Summary
- Single N-channel enhancement mode configuration
- Integrated into compact SO-8 surface-mount package
- Designed for automated tape and reel processing
Applications
- General-purpose power switching circuits
- Low-voltage DC-DC converter stages
- Load switching applications
Procurement Notes
Verify the specific electrical parameters against the official manufacturer datasheet before integration. Confirm that the SO-8 package dimensions match your PCB footprint requirements. Ensure the BVDSS rating meets the maximum voltage stress conditions of your target application circuit.
Selection Notes
Select this component when a single N-channel MOSFET with 61V to 100V capability is required in an SO-8 package. Consider the thermal dissipation limits inherent to the SO-8 form factor compared to larger packages. Evaluate gate charge characteristics if high-frequency switching efficiency is a primary design constraint.
Part Context
This component belongs to the DMT10 product family from Diodes Incorporated, which focuses on N-channel MOSFETs rated between 61V and 100V. The series offers various package options including PowerDI and TO-252 variants to suit different thermal and space constraints in modern electronic designs.
Replacement Considerations
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement maintains the same SO-8 package type and compatible pinout configuration to avoid PCB redesign.
