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Product Detailed Parameters
- Description：MOSFET N-CH 115V 3.4A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：115 V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：251 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN2020-6
- Package / Case：6-PowerXDFN
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Overview
The DMT12H090LFDF4-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN2020-6 package. It features a drain-source voltage (BVDSS) of 115V and a maximum on-resistance (RDS(ON)) of 90mΩ at VGS=10V. The device supports a continuous drain current of 3.4A at +25°C and includes 100% UIS testing for reliability.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features a 0.4mm profile and a compact PCB footprint of 4mm², making it ideal for low-profile designs.
- Includes 100% Unclamped Inductive Switching (UIS) test in production to ensure robust end-application reliability.
Applications
- DC-DC Primary Switch
- Load Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 10,000 units per manufacturer specifications. Confirm that the X2-DFN2020-6 package dimensions align with your PCB layout requirements. Ensure compliance with RoHS and halogen-free standards if mandated by your project regulations.
Selection Notes
Select this component when a low-profile N-channel MOSFET with 115V rating is required. Consider its 90mΩ RDS(ON) for efficiency needs. Evaluate thermal dissipation capabilities based on your specific PCB copper area and ambient temperature conditions.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed for minimizing on-state resistance. It utilizes silicon technology within a molded plastic case classified as UL 94V-0. The device is intended for surface-mount assembly on FR-4 substrates.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGSS) is rated at ±12V.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, customers must contact Diodes directly or their local representative.
