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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V TO252 T&
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：18.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2344 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMT15H017SK3-13 is a 150V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TO252 (DPAK) package. It features a maximum drain-source voltage of 150V and a continuous drain current of 68A at 25°C case temperature. The device exhibits a typical on-resistance of 14.6mΩ at VGS=10V and ID=20A, with a total gate charge of 34nC. Thermal characteristics include a junction-to-case resistance of 1°C/W and an operating temperature range from -55°C to +150°C.
Feature Summary
- Features low on-resistance to minimize power losses during conduction.
- Designed for fast switching performance to reduce switching losses.
- Manufactured using lead-free finish materials that are RoHS compliant.
- Verified through 100% unclamped inductive switching tests in production.
Applications
- Power management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen-free specifications, as defined by the manufacturer's quality definitions. Ensure the application environment remains within the specified thermal limits and voltage ratings.
Selection Notes
Select this component when a 150V rating is required alongside high current handling capabilities up to 68A. The low on-resistance makes it suitable for applications prioritizing efficiency. Consider the TO252 package constraints regarding thermal dissipation and PCB layout requirements. Verify compatibility with standard gate drive voltages of 10V or 8V based on the desired conduction performance.
Part Context
This part belongs to the DMT15H series of advanced N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology optimized for high-efficiency power management. The product line emphasizes robustness through rigorous testing protocols, including unclamped inductive switching verification, ensuring reliability in demanding electronic environments.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching critical parameters such as voltage rating, current capacity, and package type to ensure functional equivalence without compromising system safety or performance.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current is 272A, measured with a 10µs pulse duration at a case temperature of +25°C.
Is the device qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.
