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Product Detailed Parameters
- Description：MOSFET N-CH 150V 4.5A/13A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta), 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：67mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：425 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT15H067SSS-13 is a 150V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 150V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 4.5A at +25°C ambient temperature, increasing to 13A at +25°C case temperature. Its static drain-source on-resistance (RDS(ON)) is specified as a maximum of 67mΩ at VGS = 10V and ID = 4.1A. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High conversion efficiency with minimized on-state losses
- Fast switching speed supported by low input capacitance
- Robust reliability ensured through 100% unclamped inductive switching testing
Applications
- High frequency switching circuits
- Synchronous rectification systems
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the SO-8 package material meets UL Flammability Classification Rating 94V-0 requirements for your assembly process. Ensure compliance with RoHS directives and Halogen/Antimony-free definitions if required by your manufacturing standards.
Selection Notes
Select this component when a 150V breakdown voltage is required alongside moderate current handling capabilities up to 4.5A. The SO-8 package offers a compact footprint suitable for surface mount applications. Evaluate thermal resistance parameters against your board layout copper area to ensure adequate heat dissipation during continuous operation.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low on-state resistance with superior switching performance. The series targets high-efficiency power management solutions where minimizing conduction losses is critical for overall system performance.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and electrical characteristics.
