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Product Detailed Parameters
- Description：MOSFET N-CH 24V 14.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：24 V
- Current - Continuous Drain (Id) @ 25°C：14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 12.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT2004UFDF-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 24V and a maximum continuous drain current (ID) of 14.1A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 6.0mΩ at VGS=10V, 7.2mΩ at VGS=4.5V, and 12.5mΩ at VGS=2.5V. Packaged in a U-DFN2020-6 case with a 0.6mm profile, it supports a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features a 0.6mm profile ideal for low profile applications and a PCB footprint of 4mm².
- Totally lead-free and fully RoHS compliant, halogen and antimony free "Green" device.
Applications
- Battery Management Applications
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix (-13) corresponds to the 10,000 units per reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, including RoHS compliance and moisture sensitivity level 1 per J-STD-020, before finalizing procurement specifications.
Selection Notes
Select this component when a compact N-channel MOSFET with a 24V rating and low RDS(ON) is required for space-constrained designs. Ensure the gate drive voltage aligns with the specified thresholds for optimal conduction characteristics. Consider the thermal resistance values provided for both ambient and case mounting conditions to validate heat dissipation requirements within the operating temperature range.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 package type, which provides a small form factor suitable for modern surface mount assembly processes. The device is designed for general purpose power switching applications requiring high reliability and low profile constraints.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters against alternative suppliers if cross-referencing is necessary.
FAQ
What is the maximum pulsed drain current for the DMT2004UFDF?
The maximum pulsed drain current (IDM) is 70A, based on a 10μs pulse with a duty cycle of 1%.
Is the DMT2004UFDF qualified for automotive applications?
This specific part is not explicitly listed as AEC-Q qualified. For automotive applications requiring specific change control, customers should refer to the related automotive grade parts with the Q-suffix.
