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Product Detailed Parameters
- Description：MOSFET N-CH 24V 14.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：24 V
- Current - Continuous Drain (Id) @ 25°C：14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 12.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT2004UFDF-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (BVDSS) of 24V and a gate-source voltage (VGSS) rating of ±12V. The device offers a maximum continuous drain current (ID) of 14.1A at +25°C. On-resistance (RDS(ON)) is specified as 6.0mΩ max at VGS=10V, 7.2mΩ max at VGS=4.5V, and 12.5mΩ max at VGS=2.5V. Total power dissipation reaches 0.8W on FR-4 with minimum pads or 1.8W with a copper heat sink.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
- Features a 0.6mm profile ideal for low profile applications with a PCB footprint of 4mm².
- Totally lead-free and fully RoHS compliant, halogen and antimony free green device.
- Qualified to JEDEC standards for high reliability.
Applications
- Battery Management Applications
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm reel size and quantity per reel. Confirm that the component meets all applicable environmental directives including RoHS and REACH requirements before finalizing procurement specifications.
Selection Notes
Select this component when a compact N-channel MOSFET with low RDS(ON) is required for space-constrained designs. Ensure the operating junction temperature remains within the -55°C to +150°C range. Verify thermal management capabilities based on the specific PCB layout and copper area available for heat dissipation.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the U-DFN2020-6 surface-mount package designed for efficient thermal transfer and minimal board space consumption compared to traditional packages.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Consult official substitution lists for electrically equivalent alternatives if supply constraints exist.
FAQ
What is the maximum pulsed drain current for the DMT2004UFDF?
The maximum pulsed drain current (IDM) is 70A, measured with a 10μs pulse duration and a duty cycle of 1%.
Is the DMT2004UFDF suitable for automotive use?
Standard versions are not explicitly qualified for automotive use. For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, please refer to the related automotive grade parts with the Q-suffix.
