DMT2004UFG-13

$0.20

Description：MOSFET N-CH 24V 70A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3f28a2e4dc98 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 24V 70A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：24 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMT2004UFG-13

Overview

The DMT2004UFG-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (BVDSS) of 24V and a maximum continuous drain current (ID) of 70A at TC = +25°C. The device offers low on-state resistance (RDS(ON)), specified as 5.0mΩ max at VGS = 10V, 6.5mΩ max at VGS = 4.5V, and 10.0mΩ max at VGS = 2.5V. Total gate charge (Qg) is 53.7nC at VGS = 10V. Operating temperature range spans -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area occupied by SO-8.
100% Unclamped Inductive Switch (UIS) tested in production.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm compliance with RoHS 2 and Halogen/Antimony-free requirements if environmental specifications are mandatory for the target assembly process.

Selection Notes

Select this component when a compact footprint is required alongside high current handling capabilities up to 70A. The low RDS(ON) characteristics make it suitable for minimizing conduction losses in power management circuits where space constraints limit the use of larger packages like SO-8.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which provides a lead-free, green molding compound construction with UL flammability classification rating 94V-0.