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The DMT3003LFG-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (VDS) of 30V and a gate-source voltage (VGSS) of ±20V. The device exhibits a maximum on-resistance (RDS(ON)) of 3.2mΩ at VGS=10V and 5.5mΩ at VGS=4.5V. Continuous drain current reaches 100A at TC=+25°C. Total gate charge is 44nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm datasheet revision DS37819 Rev. 2 - 2 matches procurement specifications. Ensure compliance with RoHS directives and AEC-Q101 standards if automotive applications are intended. Validate moisture sensitivity level 1 handling requirements during assembly processes.
Select this component for high-efficiency power management requiring low conduction losses. The PowerDI3333-8 package offers significant board space reduction compared to traditional SO-8 footprints. Consider thermal resistance characteristics when designing heat dissipation strategies for continuous operation near maximum ratings.
This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. The 'DMT' prefix indicates an N-channel enhancement mode device. The suffix '-7' denotes tape and reel packaging containing 2,000 units per reel. This specific model targets compact power supply designs where footprint size and thermal efficiency are critical constraints.
No public confirmed substitute part numbers are documented.