DMT3004LFG-7

$0.29

Description：MOSFET NCH 30V 10.4A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b445ee29037b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET NCH 30V 10.4A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT3004LFG-7

Overview

The DMT3004LFG-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 25A at TC = +25°C. The maximum on-resistance (RDS(ON)) is 4.5mΩ at VGS = 10V and 7.0mΩ at VGS = 4.5V. Total gate charge (Qg) is 44nC at VGS = 10V. Thermal resistance from junction to case (RθJC) is 3°C/W, with a total power dissipation of 42W at TC = +25°C. Operating temperature range spans -55°C to +150°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Small form factor thermally efficient package enables higher density end products and occupies significantly less board area than SO-8 packages.
Rated for 100% unclamped inductive switching (UIS) avalanche capability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The -7 suffix indicates a tape and reel quantity of 2,000 units. Confirm compliance requirements such as RoHS and lead-free status directly with manufacturer specifications before procurement.

Selection Notes

Select this component for designs requiring low conduction losses and compact footprint. Evaluate thermal management strategies based on the specified RθJC and ambient operating conditions. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance.

Part Context

This device belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package, which provides a small outline with enhanced thermal dissipation capabilities compared to traditional plastic packages.

Replacement Considerations

Cross-reference pinout configurations and electrical parameters when substituting. Verify that alternative components meet the same VDSS, ID, and RDS(ON) requirements within the PowerDI3333-8 package format.