DMT3006LDK-7

$0.60

Description：MOSFET N-CH 30V 17.1A/46.2A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5bbfe83c0e11 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 17.1A/46.2A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17.1A (Ta), 46.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1320 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3030-8
Package / Case：8-PowerVDFN

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DMT3006LDK-7

Overview

The DMT3006LDK-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3030-8 (Type Q) surface-mount package. The device provides a drain-source breakdown voltage of 30V and a maximum continuous drain current of 17.1A at an ambient temperature of +25°C. The static drain-source on-resistance is specified as 6.5mΩ maximum at VGS=10V and 10mΩ maximum at VGS=4.5V, both measured at ID=12A. Total gate charge is 16.7nC at VGS=10V. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Totally lead-free and fully RoHS compliant, with halogen and antimony-free green device construction.
Features low input capacitance and fast switching speed characteristics.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the component against official Diodes Incorporated datasheet DS38251 Rev. 4-2 to confirm authenticity and specifications. Ensure the ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging format. Confirm that the V-DFN3030-8 (Type Q) case material and terminal finish meet the specific requirements of the target printed circuit board assembly process.

Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for compact power management designs. The V-DFN3030-8 package supports efficient thermal dissipation through the bottom copper pad. Verify that the 30V drain-source voltage rating aligns with the system's maximum operating voltage. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level.

Part Context

This part belongs to the DMT3006LDK series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology and is housed in a V-DFN3030-8 (Type Q) molded plastic case. The product line emphasizes low on-state resistance and fast switching capabilities for modern electronic power systems.