DMT3006LFDFQ-13

$0.13

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9d16db715d9e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：14.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.7V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1155 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT3006LFDFQ-13

Overview

The DMT3006LFDFQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage (BVDSS) range of 25V to 30V and utilizes a U-DFN2020-6 surface-mount package. The component is supplied in tape and reel quantities of 10,000 units. This device is classified as a new product from the manufacturer.

Feature Summary

Single-channel N-channel enhancement mode configuration
U-DFN2020-6 compact surface-mount packaging

Applications

Procurement Notes

Verify the specific electrical parameters against the official datasheet before integration, as distributor listings may vary. Confirm the U-DFN2020-6 package dimensions match your PCB footprint requirements. Ensure the 10k tape-and-reel quantity aligns with your production volume needs. Check for RoHS compliance status directly from the manufacturer's documentation.

Selection Notes

Select this component when a low-profile N-channel MOSFET is required for space-constrained designs. The U-DFN2020-6 package offers thermal efficiency suitable for moderate power applications. Verify that the 25V-30V breakdown voltage meets the circuit's maximum drain-source voltage requirements.

Part Context

This part belongs to the Diodes Incorporated discrete MOSFET portfolio, specifically designed for general-purpose switching applications. The DMT series typically targets cost-effective solutions for consumer electronics and portable devices where small form factors are critical.