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Product Detailed Parameters
- Description：MOSFET N-CH 30V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 55.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1320 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：27.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT3006LFG-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 55.6A at a case temperature of +25°C. The device exhibits a low on-state resistance of 6mΩ at VGS=10V and 10mΩ at VGS=4.5V. Packaged in the PowerDI3333-8 surface-mount format, it supports a total power dissipation of 27.8W at TC=+25°C. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Advanced technology designed for high efficiency power management applications
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
- 100% UIS (avalanche) rated
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details. Confirm RoHS compliance status and environmental declarations directly with the supplier or through authorized channels before procurement. Ensure the component matches the required thermal and electrical specifications for the intended application environment.
Selection Notes
Select this component for designs requiring compact footprint and high current handling within a 30V system. Evaluate thermal performance based on the specific PCB copper area and ambient conditions, as junction-to-ambient resistance depends on user board design. Consider gate drive voltage requirements when sizing the circuit for optimal on-resistance performance.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 package, which provides a small outline while maintaining robust thermal characteristics. The series is engineered to minimize on-state losses while preserving switching performance for modern electronic systems.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, voltage ratings, and thermal parameters carefully. Verify that any substitute component meets the same package dimensions and electrical specifications to ensure compatibility.
