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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：807 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT3009LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a maximum continuous drain current of 28A at TC = +25°C. The device offers a low static drain-source on-resistance (RDS(ON)) of 10mΩ max at VGS = 10V and 16.6mΩ max at VGS = 4.5V. Packaged in an SO-8 surface-mount format, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Excellent Figure of Merit (FOM) characterized by the product of gate-drain charge and on-resistance.
- Small form factor thermally efficient package enables higher density end products.
- 100% unclamped inductive switching (UIS) tested in production to ensure robust application reliability.
Applications
- Power-management functions
- Analog switches
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the SO-8 package dimensions and pinout match the target PCB footprint requirements before finalizing procurement specifications.
Selection Notes
Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for compact designs. Ensure the operating conditions align with the specified thermal characteristics and that the gate drive voltage meets the minimum threshold for optimal conduction. Verify compatibility with the intended switching frequency and load current profiles.
Part Context
This part belongs to the DMT3009LSS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 surface-mount package. The device is designed to provide a balance between low conduction losses and fast switching capabilities within a small physical footprint.
Replacement Considerations
DMT3009LSS-7
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 28A at a case temperature of +25°C and 22A at a case temperature of +70°C.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q100/101/104/200 qualification, customers must contact Diodes Incorporated directly.
