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DMT3011LDT-7 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET 2N-CH 30V 8A/10.7A 8VDFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for DMT3011LDT-7
- Description：MOSFET 2N-CH 30V 8A/10.7A 8VDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A, 10.7A
- Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：641pF @ 15V
- Power - Max：1.9W
- Operating Temperature：-55°C ~ 155°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-VDFN Exposed Pad
- Supplier Device Package：V-DFN3030-8 (Type K)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for DMT3011LDT-7
FET, MOSFET Arrays Overview
The DMT3011LDT is a dual N-channel enhancement mode MOSFET in a V-DFN3030-8 (Type K) package. Q1 offers a 30V drain-source voltage, 20mΩ on-resistance at 10V gate drive, and 8A continuous current. Q2 provides 30V breakdown, 11.1mΩ resistance at 10V, and 10.7A continuous current. Both channels feature low gate threshold voltage and operate within -55°C to +150°C junction temperature range.
FET, MOSFET Arrays Feature Summary
- Dual asymmetric N-channel configuration for compact power management
- Ultra-low profile 0.6mm height with small PCB footprint
- Optimized for high-efficiency switching and minimal conduction losses
- Lead-free construction compliant with RoHS and halogen-free standards
FET, MOSFET Arrays Applications
- Mobile computing systems
- Point of load regulation circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the component meets environmental requirements for halogen and antimony-free compliance as defined by the manufacturer's green product standards before finalizing procurement specifications.
FET, MOSFET Arrays Selection Notes
Select this component when space constraints require a 0.6mm profile or when a dual MOSFET solution reduces board area. The asymmetric design allows independent optimization for different load currents. Ensure thermal management accounts for the specified junction-to-ambient resistance values under steady-state conditions.
FET, MOSFET Arrays Part Context
This device belongs to Diodes Incorporated's advanced generation MOSFET portfolio designed for mobile applications. It utilizes silicon technology within a molded plastic case rated UL 94V-0. The package features nickel-palladium-gold terminated copper leadframes suitable for surface mount assembly.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in V-DFN3030-8 packages from Diodes Incorporated, such as the DMT3009LDK-7 or DMT3006LFDF-7, provided pinout compatibility and electrical ratings meet the circuit requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
