DMT3011LDT-7

Overview

The DMT3011LDT is a dual N-channel enhancement mode MOSFET in a V-DFN3030-8 (Type K) package. Q1 offers a 30V drain-source voltage, 20mΩ on-resistance at 10V gate drive, and 8A continuous current. Q2 provides 30V breakdown, 11.1mΩ resistance at 10V, and 10.7A continuous current. Both channels feature low gate threshold voltage and operate within -55°C to +150°C junction temperature range.

Feature Summary

• Dual asymmetric N-channel configuration for compact power management
• Ultra-low profile 0.6mm height with small PCB footprint
• Optimized for high-efficiency switching and minimal conduction losses
• Lead-free construction compliant with RoHS and halogen-free standards

Applications

• Mobile computing systems
• Point of load regulation circuits

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the component meets environmental requirements for halogen and antimony-free compliance as defined by the manufacturer's green product standards before finalizing procurement specifications.

Selection Notes

Select this component when space constraints require a 0.6mm profile or when a dual MOSFET solution reduces board area. The asymmetric design allows independent optimization for different load currents. Ensure thermal management accounts for the specified junction-to-ambient resistance values under steady-state conditions.

Part Context

This device belongs to Diodes Incorporated's advanced generation MOSFET portfolio designed for mobile applications. It utilizes silicon technology within a molded plastic case rated UL 94V-0. The package features nickel-palladium-gold terminated copper leadframes suitable for surface mount assembly.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs in V-DFN3030-8 packages from Diodes Incorporated, such as the DMT3009LDK-7 or DMT3006LFDF-7, provided pinout compatibility and electrical ratings meet the circuit requirements.