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The DMT3020LFDBQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 30V and an on-resistance of 20mΩ at VGS=10V with a continuous drain current of 7.7A. At VGS=4.5V, the on-resistance is 32mΩ with a current rating of 6.1A. The device operates within a temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package.
Verify that the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined by Diodes Incorporated. Confirm compliance with IATF 16949 manufacturing requirements if the application demands strict automotive change control protocols.
Select this component when a dual N-channel configuration is required within a compact U-DFN2020-6 footprint. Ensure the design accommodates the specified thermal resistance values and gate threshold voltage characteristics for reliable switching performance under varying load conditions.
This part belongs to the DMT3020LFDBQ series manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards while providing efficient power switching capabilities in a small surface-mount package.
DMT3020LFDBQ-7 serves as a direct alternative offering identical electrical specifications but packaged in 3,000-unit tape and reels instead of 10,000-unit reels.