DMT3020LFDBQ-7

$0.69

Description：MOSFET 2N-CH 30V 7.7A 6UDFN
Series：-

SKU:96bee0438ae4 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 7.7A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7.7A (Ta)
Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：393pF @ 15V
Power - Max：700mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：Automotive
Qualification：AEC-Q101

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DMT3020LFDBQ-7

Overview

The DMT3020LFDBQ is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 30V drain-source voltage rating and a maximum continuous drain current of 7.7A at +25°C. The device offers low on-resistance, specified as 20mΩ at VGS=10V and 32mΩ at VGS=4.5V. Packaged in a U-DFN2020-6 (Type B) case with a 0.6mm profile, it supports junction temperatures up to +150°C and meets AEC-Q101 qualification standards.

Feature Summary

Dual configuration providing two independent N-channel enhancement mode MOSFETs within a single compact package.
Qualified to AEC-Q101 automotive standards with PPAP capability for use in specific change control environments.
Low gate threshold voltage enabling efficient drive characteristics and reduced power consumption during switching operations.

Applications

General purpose interfacing switches
Power management functions

Procurement Notes

Verify the component matches the exact Diodes Incorporated part number DMT3020LFDBQ-7 or -13. Confirm the package type is U-DFN2020-6 (Type B). Ensure the supplier provides documentation confirming AEC-Q101 qualification and RoHS compliance. Check that the manufacturing origin is an IATF 16949 certified facility to meet automotive requirements.

Selection Notes

Select this component when a dual MOSFET solution is required for space-constrained automotive designs. The 0.6mm profile suits low-profile applications. Evaluate thermal performance based on the specific PCB copper area, as thermal resistance varies significantly between minimum pad layouts and larger heat-sinking configurations.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes a molded plastic green molding compound with UL 94V-0 flammability rating. The terminals are finished with NiPdAu annealed over a copper leadframe, ensuring solderability per MIL-STD-208 standards.