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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT3020LFDFW-13 is a 30V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source breakdown voltage of 30V and a static on-resistance of 17mΩ at VGS=10V, supporting an 8.4A continuous drain current. At VGS=4.5V, the resistance is 28mΩ with a 6.8A current rating. The device operates within a junction temperature range of -55°C to +150°C and includes wettable flank terminals for inspection.
Feature Summary
- Low profile 0.6mm design suitable for space-constrained applications
- Wettable flank construction enables improved optical inspection reliability
- Totally lead-free and fully RoHS compliant with halogen and antimony free composition
Applications
- General-purpose interfacing switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packing configuration. Confirm that the U-DFN2020-6/SWP package type matches the required PCB footprint dimensions. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.
Selection Notes
Select this component when a compact 30V N-channel solution is required for low-profile designs. The wettable flank feature supports automated optical inspection needs. Evaluate thermal performance against the specified junction-to-ambient resistance values for the intended mounting conditions.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET series designed to minimize on-state resistance while maintaining switching performance. It utilizes a U-DFN2020-6/SWP package with NiPdAu terminal finish over a copper leadframe, ensuring solderability per MIL-STD-208 standards.
Replacement Considerations
The datasheet lists DMT3020LFDFW-7 as an alternative packing option for the same electrical specifications. No other direct substitute part numbers are documented in the provided source material.
