DMT31M1LPSW-13

$0.51

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9333d41a69e1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5938 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT31M1LPSW-13

Overview

The DMT31M1LPSW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package with a maximum profile of 1.1mm. The device features a drain-source breakdown voltage (BVDSS) of 30V and a gate-source voltage rating of ±20V. At VGS = 10V, the static drain-source on-resistance (RDS(ON)) is typically 0.95mΩ with a continuous drain current (ID) of 130A at TC = +25°C. At VGS = 4.5V, RDS(ON) is typically 1.5mΩ with an ID of 111A. The total gate charge (Qg) is 86nC at VGS = 10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Features a thermally efficient PowerDI5060-8/SWP package with a low profile under 1.1mm for thin applications.
Designed to minimize on-state losses through low RDS(ON) while maintaining superior switching performance.
Includes 100% Unclamped Inductive Switching (UIS) testing in production.

Applications

Notebook battery power management
Load switches
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal resistance and junction temperature limits during operation.

Selection Notes

Select this component when designing circuits requiring high current handling up to 130A at low voltages. The low on-resistance minimizes conduction losses, making it suitable for space-constrained designs due to the sub-1.1mm package height. Verify compatibility with standard FR-4 substrates for optimal thermal dissipation characteristics.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is specifically engineered for body control electronics and power management systems where low profile and high efficiency are critical design parameters.