DMT31M6LPS-13

$1.64

Description：MOSFET N-CH 30V 35.8A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:782871d1bd57 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 35.8A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：35.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：123 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7019 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMT31M6LPS-13

Overview

The DMT31M6LPS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8 (Type K) package and operates with a drain-source voltage of 30V. The device achieves a maximum on-resistance of 1.35mΩ at VGS=10V and 2.4mΩ at VGS=4.5V, supporting continuous drain currents up to 150A at case temperatures of +25°C. Key electrical parameters include a gate threshold voltage ranging from 1V to 3V, total gate charge of 123nC at VGS=10V, and a junction-to-case thermal resistance of 1.2°C/W.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Small form factor thermally efficient package enables higher density end products.
100% unclamped inductive switching capability ensures enhanced reliability under inductive load conditions.

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the procurement channel is authorized to guarantee product authenticity and adherence to standard terms and conditions.

Selection Notes

Select this component for applications requiring low conduction losses and high current handling within a compact footprint. Evaluate the thermal resistance characteristics against the specific ambient or case temperature constraints of the target design. Consider the gate charge requirements relative to the driving circuit capabilities to ensure optimal switching speeds and efficiency.

Part Context

This part belongs to the DMTH/DMT series of N-channel MOSFETs from Diodes Incorporated, utilizing the PowerDI5060-8 package. It is engineered for high-density power solutions where minimizing on-resistance is critical. The device integrates advanced silicon technology to deliver robust performance in space-constrained environments compared to traditional packages.

Replacement Considerations

Consult official substitution lists for verified alternatives such as the DMT31M6LPSW-13 variant which shares similar electrical characteristics but may differ in packaging configuration. Cross-reference pinouts and thermal specifications before implementation to ensure mechanical and electrical compatibility.