DMT31M7LPS-13

$0.42

Description：MOSFET N-CH 30V 30A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d5d07bbbbbeb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 30A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5741 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta), 113W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT31M7LPS-13

Overview

The DMT31M7LPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 100A at TC = +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 1.7mΩ max at VGS = 10V and 2.4mΩ max at VGS = 4.5V. Total gate charge (Qg) is 90nC at VGS = 10V. Operating temperature range spans -55°C to +150°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Small form factor thermally efficient package enables higher density end products.
100% unclamped inductive switching ensures more reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500 units per tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm compliance with RoHS directives and halogen-free status requirements for your assembly process. Ensure thermal management aligns with the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component when a 30V N-channel MOSFET with high current capability up to 100A is required. The low RDS(ON) makes it suitable for minimizing conduction losses in power conversion circuits. Consider the PowerDI5060-8 package dimensions for PCB layout constraints and verify that the gate drive voltage supports the desired RDS(ON) performance level.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI5060-8 surface-mount case. The product is classified under transistors within the semiconductor discrete category.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters such as BVDSS, ID, and RDS(ON), as well as package compatibility.