DMT31M7LSS-13

$0.37

Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8e41c6d37c28 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：84 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5492 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta), 5.9W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT31M7LSS-13

Overview

The DMT31M7LSS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30V and a low on-state resistance (R_DS(ON)) of 2.7mΩ at V_GS = 10V, or 4mΩ at V_GS = 4.5V. The device supports a continuous drain current of up to 78A at case temperatures of +25°C. Packaged in a thermally efficient SO-8 form factor, it is designed for high-efficiency power management applications.

Feature Summary

Minimizes on-state losses through optimized R_DS(ON) while maintaining superior switching performance.
Features an excellent Figure of Merit (FOM) defined by the product of gate-drain charge and on-resistance.
Includes 100% unclamped inductive switching (UIS) testing in production to ensure robustness.
Utilizes a small form factor package that enables higher density end products.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify compliance with RoHS 3 and REACH directives before procurement. Confirm the specific ordering suffix matches the required tape and reel packaging quantity. Ensure the component meets automotive quality standards if intended for IATF 16949 certified facility manufacturing. Validate thermal requirements against the specified junction-to-ambient resistance values.

Selection Notes

Select this component for designs requiring low conduction losses in 30V systems. Evaluate the gate threshold voltage range to ensure compatibility with logic-level drivers. Consider the thermal resistance characteristics when designing PCB layouts for heat dissipation. Verify that the continuous drain current ratings align with the expected load conditions under operating temperatures.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SO-8 surface mount package. The device is designed to balance low static resistance with dynamic switching capabilities for modern power electronics.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed based on pinout compatibility, electrical ratings, and package dimensions. No alternative part numbers are confirmed in the provided source material.