DMT31M8LFVW-13

$0.31

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4464a99753e6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 138A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2979 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT31M8LFVW-13

Overview

The DMT31M8LFVW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP package and offers a maximum drain-source on-resistance of 1.6mΩ at VGS=10V and 2.6mΩ at VGS=4.5V. The device supports a continuous drain current of up to 138A at TC=+25°C and features a gate threshold voltage range of 1.2V to 2.5V. Total gate charge is specified at 43.1nC for VGS=10V and 20.3nC for VGS=4.5V, with an operating temperature range from -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes on-state losses while maintaining superior switching performance.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
Wettable flank design facilitates improved optical inspection.

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration. Confirm that the required automotive compliance is not necessary, as this standard part differs from the separate automotive-compliant datasheet (DMT31M8LFVWQ). Ensure compatibility with the PowerDI3333-8/SWP footprint during PCB layout.

Selection Notes

Select this component when minimizing board space is critical compared to traditional SO-8 packages. It is suitable for applications requiring low conduction losses in high-efficiency power management systems. Verify that the 30V breakdown voltage aligns with the system's maximum drain-source voltage requirements under all operating conditions.

Part Context

This component belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for high-density surface-mount applications where thermal efficiency and small physical dimensions are prioritized. The PowerDI3333-8 package provides a compact solution for modern electronic designs.

Replacement Considerations

An automotive-compliant version is available under the separate part number DMT31M8LFVWQ. Verify if environmental or reliability standards require the automotive-specific variant instead of the standard commercial grade part.

FAQ

Does the DMT31M8LFVW-13 meet automotive qualification standards?

No, this specific part number is not automotive-compliant. An automotive-compliant version is available under the separate datasheet for DMT31M8LFVWQ.