DMT31M8LFVWQ-7

$0.33

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fed389261c1f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 138A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2979 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT31M8LFVWQ-7

Overview

The DMT31M8LFVWQ-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 30V and a continuous drain current of up to 138A at TC = +25°C. The device offers a low on-state resistance of 1.6mΩ at VGS = 10V and 2.6mΩ at VGS = 4.5V. Total gate charge is 20.3nC at VGS = 4.5V and 43.1nC at VGS = 10V. It operates within a temperature range of -55°C to +150°C and is housed in a PowerDI3333-8 package.

Feature Summary

Low RDS(ON) minimizes on-state losses for high-efficiency power management
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 packages
Wettable flank design improves optical inspection reliability

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify AEC-Q101 qualification and IATF 16949 manufacturing compliance for automotive applications requiring specific change control. Confirm RoHS, halogen-free, and antimony-free status against project specifications. Ensure ordering suffix matches required packing quantity (Tape & Reel). Validate datasheet revision prior to final design implementation.

Selection Notes

Select this component for applications requiring low on-resistance and compact footprint. Consider thermal resistance values based on ambient or case temperature conditions. Evaluate gate charge requirements against driver capabilities. Verify that continuous and pulsed drain currents meet circuit demands under expected operating temperatures.

Part Context

This part belongs to Diodes Incorporated's PowerDI3333-8/SWP family of surface-mount MOSFETs. It utilizes a molded plastic green molding compound with matte tin annealed terminals over a copper leadframe. The package provides UL flammability classification rating 94V-0 and Level 1 moisture sensitivity per J-STD-020 standards.