DMT31M9LFVW-13

DMT31M9LFVW-13

$0.32
  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:517e8c19d0fa Category: Brand:

  
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Product Detailed Parameters

  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:24A (Ta), 141A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:48.6 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3160 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.7W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI3333-8 (SWP) Type UX
  • Package / Case:8-PowerVDFN

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DMT31M9LFVW-13

Overview

The DMT31M9LFVW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8/SWP (Type UX) packaging. Key electrical parameters include a drain-source breakdown voltage of 30V, a maximum continuous drain current of 141A at TC=+25°C, and a static drain-source on-resistance of 1.9mΩ max at VGS=10V. The device features an operating temperature range from -55°C to +150°C.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
  • Small form factor thermally efficient package enables higher density end products.
  • Features wettable flank design for improved optical inspection capabilities.
  • Gate is protected against electrostatic discharge events.

Applications

  • Backlighting systems
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the PowerDI3333-8/SWP (Type UX) package variant matches the required board layout specifications. Ensure compliance with RoHS and halogen-free requirements if mandated by the final assembly standards.

Selection Notes

Select this component when low conduction losses are critical for system efficiency. The 30V rating suits applications requiring moderate voltage handling. Evaluate thermal constraints carefully, as the small footprint requires adequate copper area or heatsinking to manage power dissipation effectively under high current loads.

Part Context

This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated. It is specifically engineered for compact designs where board space is limited. The PowerDI3333-8 package offers a significant reduction in footprint compared to traditional SO-8 packages, facilitating denser circuit board layouts.

Replacement Considerations

Consult official substitution lists for verified alternatives. Generic replacements may differ in thermal resistance or pinout compatibility within the PowerDI3333-8 family.

FAQ

What is the maximum continuous drain current at case temperature of +25°C?

The maximum continuous drain current is 141A when the case temperature is maintained at +25°C.

Does the device support automotive applications?

For automotive applications requiring AEC-Q100 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.

DMT31M9LFVW-13DMT31M9LFVW-13
$0.32
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