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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4366 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT32M4LFG is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging to minimize on-state resistance while maintaining superior switching performance. The device features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 100A at TC = +25°C. Static drain-source on-resistance (RDS(ON)) is rated at a maximum of 1.7mΩ at VGS = 10V and 2.8mΩ at VGS = 4.5V. Total gate charge (Qg) reaches 67nC at VGS = 10V. The component is designed for high-efficiency power management applications.
Feature Summary
- Advanced technology optimized for DC-DC converters to ensure minimal on-state losses
- Excellent figure of merit (FOM) characterized by the Qgd × RDS(ON) product
- Small form factor thermally efficient package enabling higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix when purchasing, as it determines the reel quantity. The -7 suffix indicates a 2,000-unit tape and reel, while the -13 suffix corresponds to a 3,000-unit tape and reel. Confirm that the required packaging matches the production volume needs before placing orders. Ensure compliance with RoHS directives and verify lead-free finish specifications if applicable to the manufacturing process.
Selection Notes
Select this component for designs requiring low conduction losses in compact footprints. The PowerDI3333-8 package provides significant board space savings compared to traditional SO-8 packages. Evaluate thermal requirements based on the junction-to-case thermal resistance of 3.9°C/W. Consider the 100% UIS rating for applications involving potential avalanche conditions. Verify gate drive voltages align with the specified RDS(ON) thresholds at 4.5V or 10V.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered specifically for high-efficiency power management solutions. The PowerDI family focuses on reducing physical footprint while enhancing thermal dissipation capabilities. This specific model targets applications demanding robust current handling within a highly integrated surface-mount configuration.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Cross-referencing requires matching BVDSS, ID ratings, RDS(ON) values, and package dimensions. Verify pinout compatibility and thermal characteristics before implementing any alternative components in existing designs.
