DMT32M5LFG-7

$1.45

Description：MOSFET N-CH 30V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a2939ef2c423 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：67.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4066 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMT32M5LFG-7

Overview

The DMT32M5LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 surface-mount packaging and operates with a drain-source voltage of 30V. The device supports a continuous drain current of 100A at case temperature +25°C, with a maximum on-resistance of 1.7mΩ at VGS=10V and 2.8mΩ at VGS=4.5V. Gate-source voltage limits are ±20V, and the total gate charge is 67.7nC at VGS=10V. Operating temperatures range from -55°C to +150°C.

Feature Summary

Advanced technology designed for high-efficiency power management applications
Small form factor thermally efficient package enabling higher density end products
Occupies just 33% of the board area occupied by SO-8 packages
100% UIS (Avalanche) rated

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The '-7' suffix indicates a tape and reel packing quantity of 2,000 units in PowerDI3333-8 packaging. Confirm that the required component meets all applicable RoHS directives and environmental compliance standards specified by the manufacturer for your region.

Selection Notes

Select this component when low on-state resistance and superior switching performance are critical for system efficiency. The PowerDI3333-8 package provides a compact footprint suitable for space-constrained designs while maintaining thermal efficiency. Ensure the application requires a 30V rating and can accommodate the specified gate threshold and drive voltage characteristics.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These components are engineered to minimize conduction losses while maintaining robust switching capabilities. The PowerDI3333-8 package represents an evolution in surface-mount technology, offering improved thermal dissipation compared to traditional leaded packages within a significantly reduced physical footprint.