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The DMT34M2LPS-13 is an N-channel MOSFET from Diodes Incorporated, designed for surface mount applications. It features a PowerDI5060-8 package with wettable flanks. The device supports a drain-source voltage (Vdss) of 30 V and delivers a continuous drain current (Id) of 21 A at ambient temperature or 100 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 7.5 mΩ at 10 V gate drive and 20 A drain current. The gate threshold voltage (Vgs(th)) is 4 V max at 250 µA, with a maximum gate charge (Qg) of 12.1 nC at 10 V. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the component meets AEC-Q101 qualification requirements if used in automotive contexts. Ensure the PowerDI5060-8 footprint matches the PCB layout specifications. Check for any recent product change notices affecting packaging or material composition.
Select this part for applications requiring a 30 V rating with high current handling capabilities in a compact surface mount form factor. The wettable flank feature facilitates automated inspection and reliable solder joints. Consider the thermal performance metrics when designing heat dissipation strategies for high-current operation.
This component belongs to the DMT series of single FETs manufactured by Diodes Incorporated. It is part of a broader portfolio of automotive-qualified discrete semiconductors designed for robust performance in demanding electronic environments. The series emphasizes efficiency and reliability through advanced MOSFET technologies.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing. Ensure any substitute part maintains the required AEC-Q101 qualification status for automotive applications.