DMT34M8LFDE-13

Overview

The DMT34M8LFDE-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package and utilizes silicon technology. The device provides a maximum drain-source breakdown voltage of 30V and a continuous drain current of 19A at +25°C. Static drain-source on-resistance is specified as 4mΩ max at VGS=10V and 7.25mΩ max at VGS=4.5V, both tested at ID=10A. Gate-source voltage limits are ±20V. Total power dissipation reaches 1.1W in steady state with a thermal resistance junction-to-ambient of 110°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
• Features low gate threshold voltage to facilitate efficient drive requirements.
• Constructed with lead-free finish, RoHS compliant materials, and free of halogens and antimony.

Applications

• General-purpose interfacing switches
• Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration when sourcing. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the absence of halogens and antimony. Ensure the selected part matches the U-DFN2020-6 (Type E) mechanical outline dimensions for proper PCB footprint compatibility during procurement.

Selection Notes

Select this component for applications requiring a 30V N-channel MOSFET with low on-resistance in a compact surface-mount package. Evaluate the thermal characteristics, including the 110°C/W junction-to-ambient resistance, against the expected power dissipation in the target circuit. Consider the 19A continuous drain current rating and the specific on-resistance values at different gate voltages to ensure adequate performance margins for the intended load conditions.

Part Context

This component belongs to the Diodes Incorporated MOSFET product line, categorized under transistors. It is part of a series designed for general-purpose switching and power management tasks. The manufacturer offers various packaging options for this device family, including different reel quantities, allowing flexibility in manufacturing integration based on production volume requirements.

Replacement Considerations

The datasheet lists DMT34M8LFDE-7 as an equivalent part number within the same product family, differing only in packing quantity (3,000 units vs. 10,000 units). Verify electrical parameters and package dimensions match before substitution.

FAQ

What is the maximum pulsed drain current capability?

The maximum pulsed drain current is 88A, defined by a 380μs pulse duration with a 1% duty cycle.

Is the device suitable for automotive applications?

For automotive applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly or their local representative.