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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1024 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMT34M8LFDE-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 30V, a maximum continuous drain current (ID) of 19A at 25°C, and a static drain-source on-resistance (RDS(ON)) of 4mΩ at VGS=10V. The device has a gate-source voltage rating of ±20V, total power dissipation of 1.1W, and thermal resistance from junction to ambient of 110°C/W.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features low gate threshold voltage to facilitate efficient drive requirements.
- Constructed with lead-free finish, RoHS compliant materials, and is halogen and antimony free.
Applications
- General-purpose interfacing switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and environmental standards required for the target assembly process. Ensure the selected variant matches the exact package dimensions and marking codes specified in the manufacturer's datasheet.
Selection Notes
Select this component based on its 30V drain-source voltage rating and low on-resistance characteristics suitable for compact designs. Evaluate the thermal resistance and power dissipation capabilities relative to the expected operating environment. Consider the U-DFN2020-6 package size constraints and ensure compatibility with the intended PCB pad layout and soldering profiles.
Part Context
This part belongs to the Diodes Incorporated MOSFET product line, specifically categorized as an N-channel enhancement mode device. It is designed for general-purpose switching and power management tasks where low on-resistance and small form factor are critical design considerations.
Replacement Considerations
Consult official Diodes Incorporated documentation or authorized distributors for verified equivalent part numbers. Do not substitute without confirming matching electrical ratings, pin configurations, and package dimensions.
