DMT35M4LFVW-13

$0.15

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1b819454b4c8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：982 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT35M4LFVW-13

Overview

The DMT35M4LFVW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package and offers a maximum drain-source on-resistance of 6mΩ at VGS=10V and 9mΩ at VGS=4.5V. The device supports a continuous drain current of up to 60A at TC=25°C and features a gate threshold voltage range of 1.15V to 2.5V. Total gate charge is specified at 7.9nC for VGS=4.5V and 16.1nC for VGS=10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes on-state losses while maintaining superior switching performance.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
100% Unclamped Inductive Switching (UIS) test in production ensures more reliable and robust end application.

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance standards and is halogen and antimony free. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component for applications requiring low on-state resistance and high current handling within a compact footprint. Consider the thermal characteristics and power dissipation limits when designing heat management solutions. Verify that the required gate drive voltage aligns with the specified RDS(ON) thresholds for optimal efficiency.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high-efficiency power management applications where minimizing board space and reducing conduction losses are critical design priorities. The PowerDI3333-8 package provides a thermally efficient solution compared to traditional surface mount packages.

Replacement Considerations

Consult the official datasheet or contact Diodes Incorporated directly for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings without confirming pinout and package dimensions.