ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：18.9A (Ta), 71.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1029 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMT35M4LPSW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source breakdown voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 71.1A at TC = +25°C. The device offers a low on-state resistance (RDS(ON)) of 5.5mΩ max at VGS = 10V and 9.6mΩ max at VGS = 4.5V. Total gate charge (Qg) is 16nC at VGS = 10V. Operating temperature range spans -55°C to +150°C.
Feature Summary
- Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Excellent figure of merit (FOM) achieved through optimized Qgd x RDS(ON) product.
- Small form factor thermally efficient package enables higher density end products.
- 100% unclamped inductive switching tested to ensure reliability.
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the official datasheet. Confirm that the component meets RoHS compliance and is halogen and antimony free. Ensure the selected variant matches the required PowerDI5060-8/SWP package type for your PCB layout constraints.
Selection Notes
Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for compact designs. The PowerDI5060-8 package provides thermal efficiency suitable for space-constrained applications. Consider the 71.1A current rating at case temperature for high-current DC-DC converter implementations where thermal management is critical.
Part Context
This part belongs to Diodes Incorporated's DMTH/DMT series of N-channel enhancement mode MOSFETs. These devices are engineered for high-density power management solutions. The PowerDI5060-8 package is a standard surface-mount footprint designed to balance electrical performance with thermal dissipation capabilities in modern electronic assemblies.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing should be performed based on matching BVDSS, RDS(ON), ID ratings, and package dimensions to ensure functional compatibility without design modification.
