DMT35M8LDG-7

$1.28

Description：MOSFET 2N-CH 30V 17A PWRDI3333
Series：-

SKU:b2cb5b791cb4 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 17A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 15.3A (Ta)
Rds On (Max) @ Id, Vgs：4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1510pF @ 15V, 1032pF @ 15V
Power - Max：980mW (Ta), 2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type G)
Grade：-
Qualification：-

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DMT35M8LDG-7

Overview

The DMT35M8LDG-7 is an asymmetric dual N-channel MOSFET in a PowerDI3333-8 package. Q1 offers a maximum RDS(ON) of 4.7mΩ at VGS=10V and 5.7mΩ at VGS=4.5V, with a continuous drain current (ID) of 17.0A at +25°C. Q2 provides a maximum RDS(ON) of 5.8mΩ at VGS=10V and 7.3mΩ at VGS=4.5V, with an ID of 15.3A at +25°C. Both channels feature a BVDSS of 30V and a VGSS rating of ±12V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Asymmetric dual configuration designed for high-efficiency power management applications
Optimized low on-state resistance combined with superior switching performance
Low input capacitance and fast switching speed characteristics
RoHS compliant lead-free finish with halogen and antimony free construction

Applications

Power-management functions
High-efficiency power conversion circuits
DC-DC converter designs

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and environmental compliance standards required for your manufacturing process. Ensure the selected variant matches the exact thermal and electrical requirements of your target application design.

Selection Notes

Select this component based on the specific asymmetric current and resistance requirements of the circuit. Evaluate the gate drive voltage levels to ensure optimal RDS(ON) performance for each channel. Consider the thermal dissipation capabilities provided by the PowerDI3333-8 package layout and copper area constraints.

Part Context

This part belongs to the DMT series of surface-mount MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package technology, which provides a compact footprint suitable for space-constrained PCB layouts while maintaining robust thermal performance for modern electronic devices.