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Product Detailed Parameters
- Description：MOSFET N-CH 40V 205A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：205A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6865 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：156W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMT4003SCT is a 40V N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 205A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is typically 2.4mΩ at VGS = 10V and ID = 90A, with a maximum of 3mΩ. The device operates within a junction temperature range of -55°C to +150°C and utilizes a TO220AB package.
Feature Summary
- Features low input capacitance for fast switching performance
- Includes 100% Unclamped Inductive Switching (UIS) testing in production
- Constructed with lead-free finish and complies with RoHS directives
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm compliance requirements such as RoHS and halogen-free status directly from the manufacturer datasheet before procurement. Ensure thermal management solutions align with the specified thermal resistance values provided in the electrical characteristics section.
Selection Notes
Select this component for high-efficiency power management applications requiring robust inductive switching capabilities. Evaluate the thermal resistance and power dissipation limits relative to the intended heatsinking strategy. Consider the gate threshold voltage and total gate charge parameters when designing the driving circuitry for optimal switching speeds.
Part Context
This part belongs to the DMTH series of N-Channel Enhancement Mode MOSFETs from Diodes Incorporated. These devices are designed for general-purpose power switching applications. The TO220AB package provides a standardized mounting interface suitable for through-hole assembly and effective heat dissipation via direct attachment to a heatsink.
Replacement Considerations
Consult official substitution guides or equivalent product lists from Diodes Incorporated for verified alternatives. Cross-reference pinouts, voltage ratings, and thermal characteristics carefully when considering third-party replacements.
