DMT4005SCT

$1.27

Description：MOSFET N-CH 40V 100A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:0fd604b4fc13 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3062 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DMT4005SCT

Overview

The DMT4005SCT is a 40V N-channel enhancement mode MOSFET in a TO220-3 package. It features a maximum drain-source voltage of 40V and a continuous drain current of 100A at TC = +25°C. The static drain-source on-resistance is 4.7mΩ max at VGS = 10V and ID = 50A. Total gate charge is 49.1nC max at VGS = 10V. Operating temperature range is -55°C to +150°C.

Feature Summary

Engineered for high efficiency power management applications with low on-resistance and fast switching capabilities.
Includes 100% unclamped inductive switching testing to ensure robust end-application reliability.
Qualified to AEC-Q101 standards for high-reliability automotive environments.
Constructed with lead-free finish, RoHS compliant materials, and halogen and antimony free compounds.

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix 'SCT' corresponds to the tube packaging containing 50 pieces per tube as documented in the manufacturer's ordering information. Confirm that the component meets the required AEC-Q101 qualification standards if utilized in automotive-grade designs. Ensure thermal management aligns with the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component when a 40V N-channel MOSFET with high current handling capability is required for through-hole mounting. The TO220-3 package facilitates effective heat dissipation for power management circuits. Consider the 4.7mΩ on-resistance specification for minimizing conduction losses in DC-DC converter topologies operating under heavy load conditions.

Part Context

This device belongs to Diodes Incorporated's generation of N-channel enhancement mode MOSFETs designed for improved efficiency. The DM series utilizes silicon technology optimized for automotive and industrial power applications. The TO220-3 mechanical case provides standardized mounting dimensions compatible with common heatsink interfaces used in electronic assemblies.

Replacement Considerations

Consult official manufacturer substitution guides for verified equivalent part numbers. Cross-reference pinout configurations and electrical parameters before implementation.