DMT4008LFV-13

$0.26

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a117f3a218d5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：12.1A (Ta), 54.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1179 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta), 35.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT4008LFV-13

Overview

The DMT4008LFV-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) surface-mount package. The device features a maximum drain-source on-resistance of 7.9mΩ at VGS=10V and 12mΩ at VGS=4.5V. Continuous drain current ratings are 54.8A at TC=+25°C and 12.1A at TA=+25°C. Key electrical parameters include a gate threshold voltage range of 1V to 3V, total gate charge of 17.1nC at VGS=10V, and input capacitance of 1179pF.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Features 100% unclamped inductive switching capability for robust end-application reliability.
Low input capacitance supports superior switching performance.
Compliant with RoHS directives and halogen/antimony-free green standards.

Applications

Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental compliance standards, specifically RoHS 2, RoHS 3, and the specified halogen and antimony-free criteria before finalizing procurement specifications.

Selection Notes

Select this component when a low-profile PowerDI3333-8 footprint is required alongside high continuous current handling capabilities. The device is suitable for designs prioritizing low conduction losses through its sub-10mΩ on-resistance at standard drive voltages. Ensure thermal management strategies account for the junction-to-ambient resistance characteristics provided in the datasheet.

Part Context

This part belongs to the DMT4008LFV series from Diodes Incorporated, representing a generation of MOSFETs optimized for balancing low on-resistance with fast switching speeds. The -13 suffix indicates a specific bulk packaging quantity distinct from other variants like the -7 suffix. It serves as a discrete switching element within broader power conversion architectures.

Replacement Considerations

Consult official substitution lists or cross-reference tools provided by Diodes Incorporated for verified equivalent parts. Do not assume functional interchangeability based solely on matching voltage and current ratings without verifying pinout compatibility and thermal performance metrics.