DMT4008LSS-13

$0.12

Description：MOSFET N-CH 40V 12.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9e1d18b36db9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 12.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：12.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1143 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.32W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT4008LSS-13

Overview

The DMT4008LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and an SO-8 surface-mount package. The device provides a maximum on-resistance of 8.5mΩ at VGS=10V and 12.5mΩ at VGS=4.5V, supporting continuous drain currents of 12.8A at 25°C and 10.3A at 70°C. Key electrical parameters include a gate threshold voltage of 1V to 3V, total gate charge of 18.6nC at VGS=10V, and a junction temperature range from -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant construction

Applications

DC-DC Converters
Synchronous Rectification
Power Supplies

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets current environmental directives including RoHS 2 and RoHS 3 compliance standards. Ensure the selected variant matches the required SO-8 package dimensions and thermal characteristics for your specific board layout constraints.

Selection Notes

Select this component when designing circuits requiring a 40V breakdown voltage with optimized conduction losses. The low gate charge supports efficient drive requirements in synchronous rectification topologies. Evaluate the thermal resistance values against your expected ambient temperatures and duty cycles to ensure safe operation within the specified junction temperature limits.

Part Context

This part belongs to the DMT4008LSS series of N-channel enhancement mode MOSFETs. It utilizes silicon technology housed in a standard SO-8 plastic case. The product line emphasizes minimizing on-state resistance while maintaining superior switching performance for modern power management applications.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent part numbers. Do not substitute based solely on generic parameter matching without confirming pinout compatibility and absolute maximum ratings.