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Product Detailed Parameters
- Description：MOSFET N-CH 40V 87A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3213 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMT43M8LFV-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) surface-mount package. The device features a maximum drain-source voltage of 40V and a continuous drain current of 87A at 25°C case temperature. Static drain-source on-resistance is specified as 4mΩ maximum at VGS=10V and 5.5mΩ maximum at VGS=4.5V. Total gate charge is 44.4nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance minimizes conduction losses for high efficiency power management.
- Compact PowerDI3333-8 package occupies significantly less board area than SO-8, enabling higher density designs.
- Thermally efficient molded plastic construction supports superior switching performance.
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the application environment remains within the specified thermal limits and voltage ratings defined in the datasheet.
Selection Notes
Select this component when space constraints require a small form factor with high current handling capabilities. The low RDS(ON) characteristics make it suitable for applications prioritizing energy efficiency. Verify compatibility with standard gate drive voltages of 4.5V or 10V based on the required current load.
Part Context
This part belongs to the DMTH/DMT series of N-channel MOSFETs from Diodes Incorporated. It shares similar electrical specifications with other variants like the DMTH43M8LFGQ-7 but differs in package type and manufacturing lot configurations. The PowerDI3333-8 package provides a distinct footprint compared to traditional leaded packages.
Replacement Considerations
Check for pin-compatible alternatives such as the DMTH43M8LFGQ-7 if different packaging is required. Ensure any substitute maintains the same 40V rating and comparable on-resistance values to preserve circuit performance.
