DMT47M2SFVWQ-13

DMT47M2SFVWQ-13

$0.77
  • Description:MOSFET N-CH 40V PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7ff742264678 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 40V PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:15.4A (Ta), 49.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12.1 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:897 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):2.67W (Ta), 27.1W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI3333-8 (SWP) Type UX
  • Package / Case:8-PowerVDFN

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DMT47M2SFVWQ-13

Overview

The DMT47M2SFVWQ-13 is a surface-mount N-channel enhancement mode MOSFET in the PowerDI3333-8/SWP (Type UX) package. It features a 40V drain-source voltage rating and a maximum on-resistance of 7.5mΩ at VGS=10V. The device supports continuous drain currents of 49.1A at TC=+25°C and 15.4A at TA=+25°C. Total power dissipation reaches 27.1W at case temperature and 2.67W at ambient temperature. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive applications
  • Wettable flank design enables improved optical inspection reliability
  • Manufactured in IATF 16949 certified facilities
  • Compliant with RoHS, Halogen-free, and Antimony-free requirements

Applications

  • Motor controls
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The '-13' designation indicates a tape and reel carrier containing 3,000 units per reel. Confirm that the component meets all necessary automotive quality certifications and packaging specifications before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring low conduction losses and high thermal efficiency within a compact footprint. The wettable flank feature facilitates automated optical inspection, ensuring higher assembly yield. Ensure the application environment aligns with the specified thermal resistance and operating temperature limits.

Part Context

This part belongs to the DMT47M2SFVWQ series of automotive-grade MOSFETs. It utilizes silicon technology to deliver enhanced performance in a leadless PowerDI package. The product line is engineered specifically to meet stringent automotive industry standards for reliability and robustness.

Replacement Considerations

DMT47M2SFVWQ-7

FAQ

Is the DMT47M2SFVWQ-13 suitable for harsh automotive environments?

Yes, it is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities.

What is the maximum gate-source voltage rating?

The absolute maximum rating for gate-source voltage is ±20V.

DMT47M2SFVWQ-13DMT47M2SFVWQ-13
$0.77
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