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Product Detailed Parameters
- Description：MOSFET N-CH 50V 9.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：902.7 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT5015LFDF-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) rated at 2.7 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 0.14 Ω at a gate-source voltage of 10 V. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 package with an exposed pad for thermal management.
Feature Summary
- N-channel enhancement mode construction for efficient switching applications
- Low on-resistance characteristic optimized for power efficiency
- Robust thermal performance via exposed pad design in compact footprint
Applications
- DC-DC converter circuits
- Load switch implementations
- Power management modules
Procurement Notes
Verify the specific ordering suffix, such as -13, corresponds to the required tape and reel quantity specified in the official datasheet. Confirm that the U-DFN2020-6 package dimensions align with the target PCB land pattern. Ensure compliance with RoHS directives if applicable to the end product requirements.
Selection Notes
Select this component when a 50 V rating and approximately 2.7 A continuous current capability are required in a small form factor. Evaluate the 0.14 Ω Rds(on) against system power loss constraints. Consider the U-DFN2020-6 package for space-constrained designs requiring adequate thermal dissipation through the bottom pad.
Part Context
This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated, designed for general-purpose switching applications. The LFDF suffix indicates lead-free and halogen-free compliance, while the -13 suffix typically denotes tape and reel packaging for automated assembly processes.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the 50 V Vdss, comparable Id rating, and compatible U-DFN2020-6 footprint without altering thermal or electrical performance characteristics.
